product summary v d s (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 23m w (v gs = 10v) r ds(on) < 35m w (v gs = 4.5v) 100% uis tested 100% rg tested AO4466 30v n-channel mosfet general description t he AO4466 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. * rohs and halogen-free compliant soic-8 t op view bottom view d d d d s s g g d s symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 36 40 62 75 r q j l 18 24 r epetitive avalanche energy 0.1mh b, g junction and storage temperature range p d t a =70c p ulsed drain current b avalanche current b, g c 3 .1 7 mj 2 -55 to 150 12 a continuous drain current af maximum u nits parameter gate-source voltage drain-source voltage 10 7 30 t a =25c t a =70c 20 absolute maximum ratings t a =25c unless otherwise noted v v maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a steady-state t 10s r q j a c/w c/w maximum junction-to-ambient a i d power dissipation t a =25c w a 6 4 s s rev.10.0: july 2013 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4466 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 16.7 23 t j =125c 24.3 30 23.7 35 m w g fs 17 s v sd 0.75 1 v i s 2.4 a c iss 298 373 448 pf c oss 46 67 88 pf c rss 24 41 58 pf r g 0.6 1.8 2.8 w q g (10v) 5.7 7.1 8.6 nc q g (4.5v) 2.7 3.5 4.2 nc q gs 1.2 nc q gd 1.6 nc t d(on) 4.3 ns gate source charge v gs =10v, v ds =15v, i d =10a total gate charge gate drain charge total gate charge turn-on delaytime dynamic parameters v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =10a v gs =10v, i d =10a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =30 v gs =0v zero gate voltage drain current on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v gate threshold voltage v ds =v gs i d =250 m a v ds =0v, v gs = 20v gate-body leakage current drain-source breakdown voltage reverse transfer capacitance maximum body-diode continuous current input capacitance output capacitance rev.10.0: july 2013 www.aosmd.com page 2 of 6 t d(on) 4.3 ns t r 2.8 ns t d(off) 15.8 ns t f 3 ns t rr 8.4 10.5 12.6 ns q rr 3.6 4.5 5.4 nc t rr 4.7 6.0 7.2 ns q rr 5.3 6.6 8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off delaytime v gs =10v, v ds =15v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime body diode reverse recovery charge i f =10a, di/dt=500a/ m s i f =10a, di/dt=500a/ m s turn-on rise time body diode reverse recovery time i f =10a, di/dt=100a/ m s body diode reverse recovery charge i f =10a, di/dt=100a/ m s body diode reverse recovery time a: the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. g: l=100uh, v dd =0v, r g =0 , rated v ds =30v and v gs =10v rev 9: may. 2012 rev.10.0: july 2013 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4466 typical electrical and thermal characteristics 0 1 0 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4 .5v 6v 10v 0 3 6 9 1 2 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 10 1 5 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w w w w ) 0.8 1 1 .2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v g s =4.5v 25 c 125 c v ds =5v v gs =4.5v v gs =10v rev.10.0: july 2013 www.aosmd.com page 3 of 6 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 10 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 10 2 0 30 40 50 60 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 10a 25 c 125 c rev.10.0: july 2013 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4466 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1 00 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c o ss c rss 0.0 0 .1 1.0 10.0 100.0 0.1 1 10 100 i d (amps) v (volts) 100 m s 10ms 1ms 100ms 1s 10s dc r d s(on) limited t j( max) =150 c t a =25 c v d s =15v i d =10a 10 m s 1.0 1 0.0 100.0 1 10 100 1000 i a , peak avalanche current (a) in descending order t a = 25 c, 100 c, 125 c, rev.10.0: july 2013 www.aosmd.com page 4 of 6 0.0 0 .1 1 10 100 v ds (volts) figure 10: maximum forward biased safe o p erating area (note e) t a =25 c 0 1 0 20 30 40 50 0.0001 0.01 1 100 power (w) pulse width (s) figure 11: single pulse power rating junction-to-ambient (note e) t j (max) =150 c t a =25 c 1.0 1 10 100 1000 i a , peak avalanche current (a) time in avalache, t a (m s) figure 9: single pulse avalanche capability rev.10.0: july 2013 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4466 typical electrical and thermal characteristics 0.01 0 .1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w t o n t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse rev.10.0: july 2013 www.aosmd.com page 5 of 6 rev.10.0: july 2013 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4466 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar a r rev.10.0: july 2013 www.aosmd.com page 6 of 6 vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f a r dss 2 e = 1/2 li di/dt i rm r r vdd v dd q = - idt t rr ar ar rev.10.0: july 2013 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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